DEVELOPMENT OF ENERGY-EFFICIENT POWER AMPLIFIERS FOR 5G COMMUNICATION NETWORKS USING GALLIUM NITRIDE (GAN) TECHNOLOGY

Abstract

This study investigates the development of energy-efficient Gallium Nitride (GaN)-based power amplifiers for 5G communication networks, focusing on improving performance through advanced thermal management, linearity enhancement, and economic feasibility. GaN technology, known for its high power density, wide bandwidth, and thermal efficiency, has emerged as a key enabler for next-generation power amplifiers in 5G applications. The results demonstrate that incorporating advanced cooling solutions significantly improves the efficiency and output power of GaN amplifiers. Specifically, the active cooling configuration achieved the highest efficiency (85%) and output power (25W), outperforming other configurations, such as HEMT with heat sinks and microchannel cooling. The power gain performance was enhanced substantially through microchannel cooling because it produced 22 dB at 2 GHz although the HEMT without cooling reached only 18 dB.  Among all testing conditions the active cooling technique achieved an EVM minimal value of 4% along with an ACPR maximum value of -48 dBc which established its superiority regarding signal quality.  Numerous economic factors indicate active cooling systems provide the most practical mass-market solution due to their higher initial investment cost ($600) but profitable margin of $350.  GaN power amplifiers for 5G uses require state-of-the-art thermal management methods because they enhance both performance and economic efficiency according to research.  Our investigation demonstrates GaN technology provides solutions for power-efficient communication systems delivering high performance at sustainable prices as per 5G requirements.